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Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

机译：低温下au / n-Gaas肖特基二极管势垒高度和理想因子的掺杂依赖性

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M. K. Hudaita; S. B. Krupanidhia;
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1. Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes [J] . Durmus Ali Aldemir, Ali Koekce, Ahmet Faruk OEzdemir Microelectronic Engineering . 2012,第OCTa期

机译：Ni / n-GaAs / In肖特基二极管的温度相关理想因子和势垒高度
2. Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au type-GaAs micro Schottky contact diodes [J] . M. A. Yeganeh, Sh. Rahmatallahpur, A. Nozad, 中国物理：英文版 . 2010,第010期

机译：二极管尺寸和串联电阻对近乎理想的Au / n型GaAs微型肖特基接触二极管的势垒高度和理想因子的影响
3. Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au type-GaAs micro Schottky contact diodes [J] . M.A.Yeganeha, Sh.Rahmatallahpur, A.Nozad, 中国物理：英文版 . 2010,第010期

机译：二极管尺寸和串联电阻对近乎理想的Au / n型GaAs微型肖特基接触二极管的势垒高度和理想因子的影响
4. PARAMETER EXTRACTION OF OXIDIZED Ni/Au AND Ni-ONLY TRANSPARENT CONDUCTING OXIDES (TCOs) ON N-TYPE GaN SCHOTTKY BARRIER DIODE WITH BIAS DEPENDENCE BARRIER HEIGHT AND IDEALITY FACTOR AT DIFFERENT TEMPERATURES [C] . Ali. T. Hajjiah, Asmaa. A. Alkhabbaz, Noah. P. Allen, European Photovoltaic Solar Energy Conference and Exhibition . 2017

机译：在N型GaN肖特基势垒二极管上的氧化Ni / Au和Ni透明导电氧化物（TCOS）的参数提取，具有偏置依赖阻挡高度和不同温度的理想因子
5. Lateral variation in the Schottky barrier height and ballistic electron transport characteristics of gold/(100)gallium arsenide and gold/platinum silicide/(100)silicon diodes. [D] . Talin, Albert Alec. 1995

机译：金/（100）砷化镓和金/硅化铂/（100）硅二极管的肖特基势垒高度和弹道电子传输特性的横向变化。
6. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals [O] . Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, 2016

机译：具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台
7. Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures [O] . Hardikar S, Hudait MK, Modak P, 1999

机译：低温下Au /低掺杂n-GaAs肖特基势垒二极管中的异常电流传输

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

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