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Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
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机译:具有负肖特基势垒高度的电触点感应的具有源极和漏极的纳米线晶体管
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摘要
A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
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