Compact Modeling of MOSFETs Channel Noise for Low-Noise RF ICs Design

机译：用于低噪声RF IC设计的MOSFET通道噪声的紧凑模型

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A compact modeling of MOSFETs channel noise is proposed by considering short-channel effects of deep submicron MOSFETs, such as mobility degradation, hot carrier, bulk charge and channel length modulation effects. The model is only dependent on bias, size

机译：通过考虑深亚微米MOSFET的短沟道效应，例如迁移率降低，热载流子，体电荷和沟道长度调制效应，提出了MOSFET沟道噪声的紧凑模型。该模型仅取决于偏差，大小

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来源
《Circuits and Systems, (APCCAS), 2006 IEEE Asia Pacific Conference on》|2006年|P.41-44|共4页
会议地点 Singapore
作者
Lu; Zhi-Qiang; Lai; Feng-Chang;
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MOSFET; radiofrequency integrated circuits; semiconductor device models; MOSFET modeling; channel noise; low-noise RFIC design; noise parameters; short-channel effects; MOSFET; channel noise; compact modeling; noise parameters; short-channel effects;

机译：MOSFET;射频集成电路；半导体器件模型； MOSFET建模；信道噪声；低噪声RFIC设计；噪声参数；短通道效应； MOSFET;信道噪声；紧凑建模噪声参数；短通道效应;

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专利

1. Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design [J] . Jongwook JEON, Ickhyun SONG, Jong Duk LEE, IEICE Transactions on Electronics . 2009,第5期

机译：短沟道MOSFET的紧凑沟道热噪声模型在CMOS RFIC设计中的应用
2. A new model for thermal channel noise of deep-submicron MOSFETs andits application in RF-CMOS design [J] . Knoblinger G., Klein P., Tiebout H. IEEE Journal of Solid-State Circuits . 2001,第5期

机译：深亚微米MOSFET热通道噪声的新模型及其在RF-CMOS设计中的应用
3. High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits [J] . Dambrine G., Raskin J.-P. IEEE Transactions on Electron Devices . 1999,第8期

机译：基于绝缘体上硅的技术MOSFET的高频四个噪声参数，用于设计低噪声RF集成电路
4. Compact Modeling of MOSFETs Channel Noise for Low-Noise RF ICs Design [C] . Lu Zhi-Qiang, Lai Feng-Chang IEEE Asia Pacific Conference on Circuits and Systems . 2006

机译：低噪声RF ICS设计MOSFET通道噪声的紧凑型造型
5. RF noise modeling of MOSFET's and its application in low-noise RFIC design. [D] . Asgaran, Saman. 2007

机译：MOSFET的RF噪声建模及其在低噪声RFIC设计中的应用。
6. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime [O] . Yasuhisa Omura 2019

机译：面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
7. A new model for thermal channel noise of deep-submicron MOSFETS and its application in RF-CMOS design [O] . Gerhard Knoblinger, Peter Klein, Marc Tiebout, 2013

机译：深亚微米MOSFETS热通道噪声的新模型及其在RF-CMOS设计中的应用

Compact Modeling of MOSFETs Channel Noise for Low-Noise RF ICs Design

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