A new model for thermal channel noise of deep-submicron MOSFETs andits application in RF-CMOS design

摘要

In this paper, we present a simple analytical model for thenthermal channel noise of deep-submicron MOS transistors including hotncarrier effects. The model is verified by measurements and implementednin the standard BSIM3v3 SPICE model. We show that the consideration ofnthis additional noise caused by hot carrier effects is essential for thencorrect simulation of the noise performance of a low noise amplifier innthe gigahertz range