Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

摘要

The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be - 1.17 × 10~(-3), and 1.12 × 10~(-3) respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7× 10~(18) cm~(-3) acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C, et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.