ALD and pulsed CVD of Ru, RuO_2, and SrRuO_3

摘要

Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO_2, and SrRuO_3, were examined for their application to advanced dynamic random access memory capacitor with a design rule of ＜20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO_4, respectively, were comparatively examined. Furthermore, deposition of RuO_2 and SrRuO_3 electrodes was explored by p-CVD and combined ALD/CVD processes using RuO_4 and Sr(iPr_3Cp)_2 as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.