Deposition of SrRuO_3 films and SrRuO_3/YBa_2Cu_3O_7 heterostructures by pulsed injection MOCVD

摘要

Single liquid source pulsed injection MOCVD technique was applied for the deposition of epitaxial SrRuO_3 films and SrRuO_3/YBa_2Cu_3O_7 heterostructures on various monocrystalline substrates (LaAlO_3, SrTiO_3, NdGaO_3, MgO, YSZ, sapphire). Sr, Y. Ba, Cu 2,2,6,6-tetramethyl-3,5-heptanedionates and Ru 2,4-pentanedionate (acetylacetonate) were used as precursor materials, 1,2-dimethoxyethane as a solvent. Deposition conditions were optimised to obtain epitaxial films and heterostructures and the influence of substrate material on films' microstructure and electrical properties was studied. The best SrRuO_3/YBa_2Cu_3O_7 heterostructures which were in-situ deposited at 825 ℃ exhibited rather sharp superconducting transition at about 91 K nd critical current density >10~6 A/cm~2 at 77 K.