Formation of Stoichiometric SrRuO_3 Electrodes for PZT Capacitors by Pulsed-MOCVD

摘要

SrRuO_3 films were deposited at 300-500 deg C on Pb(Zr_(0.4),Ti_(0.6))O_3-covered Ir/SiO_2/Si substrates by metallorganic chemical vapor deposition (MOCVD). Through the pulsed introduction of a source gas mixture (pulsed-MOCVD), the Ru/(Ru + Sr) ratio became unity above 350 deg C due to a similar deposition rate for SrO and RuO, components in the film. It became unity at 450 deg C in spite of the increased input-gas flow rate of the Ru source under the fixed Sr source and we obtained films consisting of crystalline stoichiometric SrRuO_3. This demonstrated that good crystalline stoichiometric SrRuO_3 film was reproducible by pulsed-MOCVD. Excellent fatigue properties and ferroelectricity were obtained from the SRO/RZT/Ir capacitor.