Effect of carrier gases flow rate on isotropic and anisotropic growth of graphene crystals by chemical vapor deposition

摘要

Chemical vapor deposition (CVD) has been widely adopted for synthesis of high quality large graphene crystals. There are various factors that influence the graphene growth on copper catalytic substrate in a CVD process. The effect of growth temperature, carrier gas mixture and oxide surface of copper have significant influence on growth of large individual crystals [1]. In this study, we observed the isotropic and anisotropic growth of graphene crystals by a solid source CVD process by changing the amount of carrier gas mixture (argon and hydrogen).