An Ion-Implanted GaAs MESFET Process for 28V S-band MMIC Applications

摘要

As an extension of M/A-COM's 10V MSAG~(TM) power process, we have demonstrated an ion-implanted, MMIC-compatible, GaAs MESFET (HVMSAG~(TM)) that utilizes a gate-connected field plate to enable improved high voltageoperation. This high-voltage FET is capable of 1.5W/mm P_(out) and 60% PAE at S-band, operating from a 28V drain supply. The HVMSAG process has demonstrated four important features: proven reliability at 28V, full MMIC capability with demonstrated power scalability, low cost, and immediate production capability.