A Highly Uniform and Reliable AlGaN/GaN HEMT

摘要

We describe a highly uniform and reliable AIGaN/GaN-based high electron mobility transistor (HEMT) with the surface-charge-controlled structure on a SiC substrate for microwave applications. To obtain a highly uniform device, we adopted the n-GaN-cap structure, and optimized the stress and thickness of the SiN on the n-GaN-surface. The averaged threshold voltage (Vth) of-1.69 V and the associated standard deviation of 21 mV were obtained. Preliminary reliability was characterized using a RF power stress test. A CW P_3dB RF-power measurement at Vds of 60 V exhibited good reliability over 1000 h.