Performance and Fabrication of GaN/AlGaN Power MMIC at 10 GHz

摘要

High performance and fabrication of a coplanar 2 stage power amplifier based on a GaN/AlGaN HEMT technology on 2-inch SiC substrate has been realized. At 10 GHz the coplanar MMIC delivers a maximum output power of 13.4 W, measured on wafer in pulsed mode, a linear gain of 20 dB and a maximum PAE of 25 % at a V_(DS) bias of 35 V and compression level of 5 dB. The yield of the MMICs across 2-inch wafer is 65 %.