首页> 外文会议>Advanced materials and technologies for microano-devices, sensors and actuators >VERTICALLY INTEGRATED MEMS SOI COMPOSITE POROUS SILICON-CRYSTALLINE SILICON CANTILEVER-ARRAY SENSORS: CONCEPT FOR CONTINUOUS SENSING OF EXPLOSIVES AND WARFARE AGENTS
【24h】

VERTICALLY INTEGRATED MEMS SOI COMPOSITE POROUS SILICON-CRYSTALLINE SILICON CANTILEVER-ARRAY SENSORS: CONCEPT FOR CONTINUOUS SENSING OF EXPLOSIVES AND WARFARE AGENTS

机译:垂直集成的MEMS SOI复合多孔硅-晶体硅悬臂-阵列传感器:连续检测炸药和炸药的概念

获取原文
获取原文并翻译 | 示例

摘要

This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.
机译:这项研究的重点是使用SOI晶片作为起始材料并使用体微加工技术,由晶体硅(c-Si)制成的悬臂阵列。随后使用专门为仅在一侧提供多孔硅薄表面层而设计的独特气相工艺,将阵列转换为复合多孔硅晶体硅悬臂梁。这导致了不对称的悬臂阵列,其一侧提供了纳米结构的多孔大表面,该表面可以进一步涂覆聚合物,从而提供额外的传感能力和增强的传感能力。 c-Si悬臂与带有电极的底部硅芯片垂直集成,并允许静电驱动。倒装芯片键合用于垂直集成。读数由灵敏的电容数字转换器提供。报告了制造,加工和表征结果。报告的研究旨在实现具有集成读出功能的微型悬臂芯片,以在现场感应爆炸物和化学战剂。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号