Nanolmprint, DSA and Multi-Beam Lithography: Patterning Technologies with New Integration Challenges

摘要

Through three collaborative R&D programs, IDEAL for Directed Self-Assembly Lithography, IMAGINE for Massively Parallel Electron Beam Lithography and INSPIRE for Nanolmprint Lithography, CEA-LETI is currently assessing and boosting the development of these alternative technologies through strategic partnerships and innovative mix of them. This paper will present the latest process developments achieved on both chemically and non-Chemically Amplified Resist exposed with a low accelerating voltage (5 kV) exposure platform developed by Mapper Lithography. Several approaches will be presented to manage the Resolution-Sensitivity-Line Width Roughness challenge as well as the etching transfer in the underneath stacks required at the 28 nm node. For the Directed Self-Assembly (DSA) of Block Copolymers (BCP) patterning solution, even if it is considered as a promising patterning solutions due to its simplicity, low cost of processing and capability to generate high density patterns, some challenges (DSA-friendly design, low defectivity and accurate placement error) still need to be addressed for a complete adoption of DSA in manufacturing. We propose to discuss the advanced integration flows using DSA of block copolymer for PS-PMMA materials, like "DSA planarization" approach and also surface guide affinity tuning. Then, NIL wafer scale technology will be assessed thought CDU and printed resist feature height measurements. These result will underline the key process parameters that will define the integration scheme of such technology in high volume manufacturing. This paper will also highlight the specific metrology requirements and method needed to properly evaluate such patterning technology.