Characterization of CMOS programmable multi-beam blanking arrays as used for programmable multi-beam projection lithography and resistless nanopatterning

摘要

Multi-beam projection lithography and resistless direct nanopatterning techniques provide decisive advantages compared to existing single electron and ion beam tools. Aperture plate systems (APS) including CMOS addressable programmable blanking arrays serve as pattern generators within these tools. An APS test stand was designed to achieve 0.08 μrad for measuring lateral/angular beamlet movements. For CMOS programmable APS units, providing 43 000 programmable beams, nearest-neighbour cross talk measurements have shown 5.5 μrad influence. This is well below the target spec for the charged particle multi-beam projection technology.