OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

摘要

Silicon carbide has suitable properties for high power electronic applications. We present here results on 6H-SiC bipolar diodes protected by Junction Termination Extension. We have achieved breakdown voltage of ～1200 V, which is close to the theoretical value, and forward current density of 120 A cm~(-2) at 5 V. Optical Beam Induced Current measurements and simulations have shown that JTE are very efficient and that their parameters are close to the optimum. Nevertheless, a little increase of their doping level should increase the breakdown voltage up to ～1400V.