Passivation Effect on Channel Recessed 4H-SiC MESFETs

摘要

Channel recessed 4H-SiC MESFETs were fabricated and have demonstrated excellent small signal characteristics, such as, F_t of 14.5 GHz and F_(max) of 40 GHz (for MAG = 1). The effect of Si_3N_4 passivation on these devices has been studied in this work. Current instability and RF power performance were improved after passivation. From our measurements, we found out that the passivation of SiC MESFETs reduces the surface effects and improves the RF power performance by suppressing the instability in DC characteristics.