Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging

摘要

Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS and other techniques. Results show that Au/Ti with an ultrathin Au layer is a promising getter material for wafer-level vacuum packaging with an activation temperature ≤300°C.