0.4-μm High Performance InP HEMT

摘要

This paper discusses an InP HEMT with double InGaAs channel layers (Indium content different). Devices with 0.4-μm gatelength exhibit a high full channel current of 790mA/mm and high peak transconductance of 1050mS/mm. A high current gain cutoff frequency of 120GHz also is observed.