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InPSb channel HEMT on InP for RF application
InPSb channel HEMT on InP for RF application
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机译:InP上的InPSb通道HEMT,用于RF应用
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摘要
A high electron mobility transistor (HEMT) includes a substrate comprising indium phosphide and an optional buffer layer immediately adjacent the substrate. A channel layer immediately is adjacent the buffer layer, with the channel layer comprising indium phosphide antimonide and characterized by a formula of InPxSb(1−x), wherein x is about 0.85. The channel layer has a thickness of about 120 Angstroms. A Schottky layer is immediately adjacent the channel layer and a contact layer is immediately adjacent the Schottky layer. The transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2×106 cm/s.
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