An InPSb channel HEMT on InP for RF applications

摘要

A high electron mobility transistor (HEMT) (10) includes a substrate (11) comprising indium phosphide and an optional buffer layer (12) immediately adjacent the substrate (11). A channel layer (13) immediately is adjacent the buffer layer (12), with the channel layer (13) comprising indium phosphide antimonide and characterized by a formula of InPxSb(1-x), wherein x is about 0.85. The channel layer (13) has a thickness of about 120 Angstroms. A Schottky layer (14) is immediately adjacent the channel layer (13) and a contact layer (15) is immediately adjacent the Schottky layer (14). The transistor (10) is characterized by a breakdown field of about 400kV/cm and a saturated velocity of about 8.2 x 106 cm/s.