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Chip embedding technology developments leading to the emergence of miniaturized system-in-packages

机译:芯片嵌入技术的发展导致了小型化的系统级封装的出现

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At PCB manufacturing level, 50 µm thin chips have been embedded with pitches up to 200 µm in up to 18″×24″ panels using face-down technology for chip assembly. This paper describes in detail the merits and shortcomings of both face-down and face-up embedding. In addition, it shows the further developments in chip embedding technologies to incorporate chips with even smaller pitches up to 50µm. Embedding of small pitch chips has been realised with concurrent developments in accurate chip positioning, plating methods and chemistries and ultra fine line patterning. The results in this paper show the emergence of a new prototype Embedded chip-QFN package with contact pads at 400µm pitch and a total number of 84I/Os with dimensions of 10mm×10mm. The embedded chip in the QFN package is 5mm×5mm in size and has a peripheral pad configuration at 100µm pitch. All Embedded chip-QFN packages have been manufactured in 10″×14″ panels at prototype level. This paper also shows the latest developments in semi-additive processes for copper structuring of chip embedded packages with pitches lower than 100µm. Ultra fine line structuring technology has been developed up to 15µm L/S copper structures using innovative 2µm copper base foils. Qualitative analysis using acoustic microscopy and shear testing of the QFNs provides evidence of good resin adhesion and package mechanical robustness. Furthermore, this study shows promising results for embedding of chips with pitches dwon to 50µm, introducing a new “vialess” face-down embedding approach where direct contacts are established between copper pads and functional copper foil. Developmental work on “vialess” embedding technology is still ongoing.
机译:在PCB的制造水平上,采用面向下的技术进行芯片组装,可以在多达18“×24”的面板中以50 µm的间距嵌入200 µm的薄芯片。本文详细介绍了正面朝下和​​正面朝上嵌入的优点和缺点。此外,它显示了芯片嵌入技术的进一步发展,该技术将结合更小间距达50μm的芯片。随着精确芯片定位,电镀方法和化学以及超细线图案的同时发展,已经实现了小间距芯片的嵌入。本文的结果显示了一种新型原型嵌入式QFN封装的出现,该封装具有间距为400μm的接触垫,并且总共有84个I / O,尺寸为10mm×10mm。 QFN封装的嵌入式芯片尺寸为5mm×5mm,并具有间距为100μm的外围焊盘配置。所有嵌入式QFN封装都在10“×14”面板的原型级别上制造。本文还展示了间距小于100μm的芯片嵌入式封装的铜结构半加成工艺的最新进展。使用创新的2µm铜基箔片,已开发出高达15µm的L / S铜结构的超细线结构技术。使用声学显微镜的定性分析和QFN的剪切测试提供了良好的树脂附着力和包装机械强度的证据。此外,这项研究显示了将芯片嵌入间距为50μm的芯片的有希望的结果,并引入了一种新的“无孔”面朝下嵌入方法,该方法可在铜焊盘和功能性铜箔之间建立直接接触。关于“无孔”嵌入技术的开发工作仍在进行中。

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