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Chip embedding technology developments leading to the emergence of miniaturized system-in-packages

机译:芯片嵌入技术发展导致小型化系统的出现

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At PCB manufacturing level, 50 µm thin chips have been embedded with pitches up to 200 µm in up to 18″×24″ panels using face-down technology for chip assembly. This paper describes in detail the merits and shortcomings of both face-down and face-up embedding. In addition, it shows the further developments in chip embedding technologies to incorporate chips with even smaller pitches up to 50µm. Embedding of small pitch chips has been realised with concurrent developments in accurate chip positioning, plating methods and chemistries and ultra fine line patterning. The results in this paper show the emergence of a new prototype Embedded chip-QFN package with contact pads at 400µm pitch and a total number of 84I/Os with dimensions of 10mm×10mm. The embedded chip in the QFN package is 5mm×5mm in size and has a peripheral pad configuration at 100µm pitch. All Embedded chip-QFN packages have been manufactured in 10″×14″ panels at prototype level. This paper also shows the latest developments in semi-additive processes for copper structuring of chip embedded packages with pitches lower than 100µm. Ultra fine line structuring technology has been developed up to 15µm L/S copper structures using innovative 2µm copper base foils. Qualitative analysis using acoustic microscopy and shear testing of the QFNs provides evidence of good resin adhesion and package mechanical robustness. Furthermore, this study shows promising results for embedding of chips with pitches dwon to 50µm, introducing a new “vialess” face-down embedding approach where direct contacts are established between copper pads and functional copper foil. Developmental work on “vialess” embedding technology is still ongoing.
机译:在PCB制造水平下,使用芯片组件的面向下技术,50μm薄芯片嵌入高达200μm的高达200μm,高达18×24“面板。本文详细介绍了面朝下和面朝嵌入的优点和缺点。此外,它显示了芯片嵌入技术的进一步发展,以掺入甚至更小的俯仰至50μm的芯片。通过同时开发,精确的芯片定位,电镀方法和化学品和超细线图案化,已经实现了小型音高芯片的嵌入。本文的结果表明,新型原型嵌入式芯片QFN封装的出现,接触垫处为400μm间距,总数为84i / O,尺寸为10mm×10mm。 QFN封装中的嵌入式芯片的尺寸为5mm×5mm,并且在100μm间距时具有外围焊盘配置。所有嵌入式芯片QFN封装都是在原型水平的10“×14”面板中制造的。本文还显示了芯片嵌入式包装铜结构的半添加过程中的最新发展,其间距低于100μm。超细线结构技术已开发出高达15μm的L / S铜结构,使用创新的2μm铜基箔。使用声学显微镜和QFN的剪切测试的定性分析提供了良好的树脂粘附和封装机械稳健性的证据。此外,该研究表明,嵌入污水污水至50μm的有希望的结果,引入了新的“Vialess”面对面的嵌入方法,其中在铜焊盘和功能铜箔之间建立了直接触点。 “Vialess”嵌入技术的发展工作仍在持续下。

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