SILICONE THROUGH-CONTACT (TSV) KEY FOR SURFACE MEASUREMENT, AND HALF-LEADER DEVICE AND HALF-LEADER PACKAGING WITH TSV KEY

摘要

A silicon through-pass (TSV) key for superposition measurements comprises: a first TSV, which is separated by at least one part or more. A portion of a substrate in a first direction perpendicular to an upper surface, or the surface area of the substrate is extended; and at least one ring pattern which is separated from the first TSV and surrounds the first TSV in a second direction which is parallel to the cover surface of the substrate, wherein at least one ring pattern is arranged in a layer which is below a cover surface of the first TSV in the first direction, wherein an inner measuring point corresponds to the first TSV,an outer measuring point corresponding to at least one ring pattern, and the inner measuring point and the outer measuring point are arranged to provide an overlay measurement of a TSV.