METHOD FOR IMPROVING CONTROL GATE UNIFORMITY DURING MANUFACTURE OF PROCESSORS WITH EMBEDDED FLASH MEMORY

摘要

A device has a semiconductor substrate including a recessed region. The recessed region has a center portion and a periphery portion. An isolation region abuts the periphery portion. A plurality of gate stacks are in the recessed region. A protective layer overlying the plurality of gate stacks and the isolation region has a substantially planar upper surface across the recessed region and the isolation region.