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Method for improving control gate uniformity during manufacture of processors with embedded flash memory
Method for improving control gate uniformity during manufacture of processors with embedded flash memory
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机译:用于改进控制栅极均匀性的方法,包括嵌入式闪存的处理器
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摘要
A method is provided for the manufacture of an integrated semiconductor device that includes an embedded flash memory array formed in a recessed region of a semiconductor substrate, the method includes, prior to formation of floating and control gate stacks of the memory array, depositing a protective layer over layers of gate material, and depositing a self-leveling sacrificial layer over the protective layer to produce a substantially planar upper surface. The sacrificial layer is then etched to a depth that removes the sacrificial layer and leaves a substantially planar face on the protective layer. A photo mask is then deposited on the protective layer and the gate stacks are etched from the layers of gate material.
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