Enhancement-mode field effect transistor

摘要

The present disclosure discloses an enhancement-mode field effect transistor. This enhancement-mode field effect transistor includes a substrate, a channel layer formed on an upper surface of the substrate, a source electrode and a drain electrode respectively formed on both sides of the channel layer, and a gate electrode formed on an upper surface of the channel layer, a region outside the corresponding region of the gate electrode in the channel layer is provided with a carrier-free region. Carriers are absent in the carrier-free region, and carriers are present in the remaining portion of the channel layer. The carrier-free region is not disposed below the gate electrode, but is disposed outside the corresponding region of the gate electrode in the channel layer, and the threshold voltage of the device can be regulated by regulating the width and number of the carrier-free region.