ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR

摘要

The invention belongs to the technical field of semiconductor, in particular to an enhancement-mode field effect transistor. This enhancement-mode field effect transistor comprises: a substrate; a channel layer formed on an upper surface of the substrate; a source electrode and a drain electrode respectively formed on both sides of the channel layer; a gate electrode formed on an upper surface of the channel layer; a region outside the corresponding region of the gate electrode in the channel layer is provided with a carrier-free region; carriers are absent in the carrier-free region, and carriers are present in the remaining portion of the channel layer. In this invention, the carrier-free region is not disposed below the gate electrode, but is disposed outside the corresponding region of the gate electrode in the channel layer, when the carrier-free region is formed, no damage to the lower surface of the gate electrode occurs, and the threshold voltage of the device can be regulated by regulating the width and number of the carrier-free region, and the device switching speed is fast.