INTEGRATED SPACE STRUCTURES WITH RUNDUM GATE, WHICH REFERENCE WITH AN ELECTRICAL SOURCE/DRAIN SUBSTREAT CONTACT

摘要

Round gate structures are described that have devices with an electrical source/drain substrate contact. An integrated circuit structure has a first vertical arrangement of horizontal nanowires over a first Finn. A first gate stack is located above the first vertical arrangement of horizontal nanowires. A first pair of epitactical source or drain struStructures are located at the first and second ends of the first vertical arrangement of horizontal nanowires. One or both of the first pair of epitactical source or drain structures are directly electrically connected to the first Finn. A second vertical arrangement of horizontal nanowires is over a second Finn. A second gate stackis above the second vertical arrangement of horizontal nanowires. A second pair of epitactical source or drain structures are located at the first and second ends of the second vertical arrangement of horizontal nanowires. Both structures of the second pair of epitactical source or drain structures are electrically isolated from the second Finn.