GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH SOURCE/DRAIN-TO-SUBSTRATE ELECTRICAL CONTACT

摘要

A gate all around structure having devices with source/drain to substrate electrical contact is described. The integrated circuit structure includes a first vertical arrangement of horizontal nanowires over a first fin. The first gate stack is over the first vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures is at a first end and a second end of the first vertical arrangement of horizontal nanowires. One or both of the first pair of epitaxial source or drain structures are directly electrically coupled to the first fin. A second vertical arrangement of horizontal nanowires is above the second fin. A second gate stack is over the second vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures is at the first end and the second end of the second vertical arrangement of horizontal nanowires. Both the second pair of epitaxial source or drain structures are electrically isolated from the second fin.