REFLECTIVE PHOTOMASK AND PRODUCTION METHOD THEREFOR

摘要

The reflective photomask 10 includes a substrate 11, a multilayer reflective film 12 formed on the substrate 11 and reflecting exposure light including light having a wavelength of 5 nm or more and 15 nm or less for lithography, and a multilayer reflective film An absorption film 14 formed on (12) and absorbing exposure light and forming a circuit pattern 15 or a circuit pattern formation region, and an outer periphery of the circuit pattern 15 or circuit pattern formation region region side, a light-shielding region B formed by removing a part of the multilayer reflective film 12 and the absorbing film 14 on the substrate 11 and shielding a part of the exposure light reflected by the multilayer reflective film 12; (B) is formed on a part of the surface 11b of the exposed substrate with a pitch of 3000 nm or less, and has a wavelength of 140 nm or more and 800 nm or less included in the exposure light. A plurality of convex portions 1 to suppress are provided.