首页> 外国专利> REFLECTIVE PHOTOMASK BLANK, REFLECTIVE PHOTOMASK, REFLECTIVE PHOTOMASK PRODUCTION METHOD, EXPOSURE METHOD, AND EXPOSURE DEVICE

REFLECTIVE PHOTOMASK BLANK, REFLECTIVE PHOTOMASK, REFLECTIVE PHOTOMASK PRODUCTION METHOD, EXPOSURE METHOD, AND EXPOSURE DEVICE

机译:反射性光掩模空白,反射性光掩模,反射性光掩模生产方法,曝光方法和曝光设备

摘要

Provided is a reflective photomask blank that, during production of reflective photomasks, is capable: of reducing position displacement of transfer patterns caused by compressive stress of a reflective multi-layer film even if the reflective multi-layer film in the vicinity of the pattern area is removed and a light-shielding frame is formed; and of improving positional accuracy of an image being transferred. This reflective photomask blank (502) has the reflective multi-layer film (20) and an absorption film (30) provided layered in said order, on one surface of a substrate (10), and a conductive film (50) provided on the other surface of the substrate (10). A fiducial mark (42) and a position measurement mark (34) are provided on an outer circumference section of the reflective photomask blank (502). The position measurement mark (34) is used to correct the effect of stress released when the light-shielding frame is formed.
机译:本发明提供一种反射型光掩模坯料,其在反射型光掩模的制造中能够:即使反射型多层膜在图案区域附近,也能够减少由反射型多层膜的压缩应力引起的转印图案的位置偏移。去除并形成遮光框;并且提高了被转印图像的位置精度。该反射型光掩模坯料(502)在基板(10)的一个面上具有依次层叠的反射型多层膜(20)和吸收膜(30),在其上设置有导电膜(50)。基板(10)的另一表面。在反射型光掩模坯料(502)的外周部上设有基准标记(42)和位置测量标记(34)。位置测量标记(34)用于校正在形成遮光框架时释放的应力的影响。

著录项

  • 公开/公告号WO2015141230A1

    专利类型

  • 公开/公告日2015-09-24

    原文格式PDF

  • 申请/专利权人 TOPPAN PRINTING CO.LTD.;

    申请/专利号WO2015JP01543

  • 发明设计人 NISHIYAMA YASUSHI;

    申请日2015-03-19

  • 分类号G03F1/24;G03F7/20;

  • 国家 WO

  • 入库时间 2022-08-21 15:04:10

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