A plasma processing apparatus according to an exemplary embodiment includes a chamber, a high frequency power supply unit, and a correction signal generation unit. The high frequency power supply unit outputs pulsed high frequency power in the first period. The high frequency power supply unit outputs the synthesized high frequency power in one or more second periods after the first period. The correction signal generator generates a correction signal that vibrates in an antiphase with respect to the reflected wave monitor signal in the first period. The high frequency power supply unit generates synthesized high frequency power using the correction signal. The power supply unit is configured to alternately repeat the output of the pulsed high frequency power in the first period and the output of the synthesized high frequency power in one or more second periods.
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