首页> 外国专利> PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS, PLASMA GENERATING METHOD, AND PLASMA PROCESSING METHOD

PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS, PLASMA GENERATING METHOD, AND PLASMA PROCESSING METHOD

机译:等离子产生装置,等离子处理装置,等离子产生方法和等离子处理方法

摘要

PROBLEM TO BE SOLVED: To provide a plasma generating apparatus which can generate a stronger electric field strength, and to provide a plasma processing apparatus, a plasma generating method and a plasma processing method.;SOLUTION: The plasma generating apparatus which generates plasma by radiating microwaves to a plasma generating region comprises a microwave generation unit which generates microwaves, a resonance unit which resonates the microwaves, and a radiation control unit which controls radiation of the microwaves from the resonance unit to the plasma generating region. The radiation control unit stores the energy of the microwaves in the resonance unit by suppressing radiation of the microwaves, and enhances the electric field strength by emitting the energy of the microwaves.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种能够产生更强的电场强度的等离子体产生装置,并提供一种等离子体处理装置,等离子体产生方法和等离子体处理方法。解决方案:通过辐射产生等离子体的等离子体产生装置到达等离子体产生区域的微波包括产生微波的微波产生单元,使微波共振的共振单元和控制从共振单元向等离子体产生区域的微波辐射的辐射控制单元。辐射控制单元通过抑制微波的辐射,将微波的能量存储在共振单元中,并通过释放微波的能量来增强电场强度。;版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012142172A

    专利类型

  • 公开/公告日2012-07-26

    原文格式PDF

  • 申请/专利权人 SHIBAURA MECHATRONICS CORP;CHUBE UNIV;

    申请/专利号JP20100293660

  • 发明设计人 SUGAI HIDEO;IVAN PETROV GANASHEV;

    申请日2010-12-28

  • 分类号H05H1/24;H05H1/46;H01L21/3065;H01L21/205;H01L21/31;

  • 国家 JP

  • 入库时间 2022-08-21 17:44:09

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