A high frequency power applying apparatus, a plasma generating apparatus, a plasma processing apparatus, a high frequency power applying method, a plasma generating method, and a plasma processing method

摘要

A plasma processing apparatus is capable of generating a plasma under a high degree of vacuum even when a high frequency power with a high frequency is applied to the plasma processing apparatus so that plasma processing with high uniformity and low degree of damage can be performed with high accuracy And a lower electrode 12 for holding the object 13 is provided at the bottom of the chamber 10A with an insulator 11 interposed therebetween. The first high frequency power source 14 applies a high frequency power to the multi spiral coil 15A through the impedance matcher 16A and the four spiral coil portions 15a are connected in parallel. The length of each coil portion 15a is 1/4 of the wavelength of the high-frequency power supplied from the first high-frequency power supply 14. The second high frequency power supply 17 applies a high frequency bias voltage to the lower electrode 12.