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Apparatus and method for applying RF power apparatus and method for generating plasma and apparatus and method for processing with plasma

机译:施加射频功率的装置和方法产生等离子体的装置和方法以及利用等离子体进行处理的装置和方法

摘要

On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple spiral coil composed of four spiral coil elements connected in parallel via an impedance matcher. The length of each of the coil elements corresponds to 1/4 of the wavelength of the RF power supplied from the first RF power source. A second RF power source applies an RF bias voltage to the lower electrode.
机译:在腔室的底部,设置有下部电极,该下部电极用于在绝缘体的干预下支撑待处理的物体。第一RF功率源将RF功率施加到由经由阻抗匹配器并联连接的四个螺旋线圈元件组成的多个螺旋线圈。每个线圈元件的长度对应于从第一RF电源供应的RF功率的波长的1/4。第二RF电源将RF偏置电压施加到下电极。

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