INDUCTIVELY COUPLED PLASMA GENERATING APPARATUS, SELF BIAS APPLYING APPARATUS, PLASMA PROCESSING APPARATUS, PLASMA GENERATING METHOD, AND SELF BIAS APPLYING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an inductively coupled plasma generating apparatus which is suitable for a minimal fab system and can be miniaturized, and further to provide a self bias applying apparatus, a plasma processing apparatus, a plasma generating method, and a self bias applying method.;SOLUTION: The inductively coupled plasma generating apparatus includes: a high frequency power supply circuit 7 having a bridge circuit 7g for converting DC power 7a into high frequency power and outputting it, a transformer 7j for transforming the high frequency power output from the bridge circuit 7g, and a resonance capacitor C connected in series to the transformer 7j; and a plasma generation antenna 5e which is an inductor and is supplied with the high frequency power transformed by the transformer 7j.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2017,JPO&INPIT