Electron beam generated plasmas: Ultra cold sources for low damage, atomic layer processing(PPT)

摘要

1. Unique control over the production of species and their transport to surface 2. ne is high (10~(10)-10~(11) cm~(-3)); Te is very low (≈ 0.5 eV) 3. Large flux of very low energy (0-5 eV) ions 4. Well-suited to advance unique processing applications 4.1 Ion energy-sensitive materials 4.2 Atomic Layer Etch (or Deposition) 4.3 Processing of very thin (～ nm) or atomically thin (2-D) materials.