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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Electron Beam Generated Plasmas for Ultra Low T-e Processing
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Electron Beam Generated Plasmas for Ultra Low T-e Processing

机译:电子束产生的等离子体,用于超低T-e处理

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The Naval Research Laboratory (NRL) has developed a processing system based on an electron beam-generated plasma. Unlike conventional discharges produced by electric fields (DC, RF, microwave, etc.), ionization is driven by a high-energy (similar to few keV) electron beam, an approach that can be attractive to atomic layer processing applications. In particular, high electron densities (10(10)-10(11) cm(-3)) can be produced in electron beam generated plasmas, where the electron temperature remains between 0.3 and 1.0 eV. Accordingly, a large flux of ions can be delivered to substrate surfaces with kinetic energies in the range of 1 to 5 eV. This provides the potential for controllably etching and/or engineering both the surface morphology and chemistry with monolayer precision. This work describes the electron beam driven plasma processing system, with particular attention paid to system characteristics and the ability to control the generation and delivery of ions to the surface and their energies. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. All rights reserved.
机译:海军研究实验室(NRL)开发了一种基于电子束产生等离子体的处理系统。与电场(DC,RF,微波等)产生的常规放电不同,电离是由高能(类似于几keV)电子束驱动的,这种方法对于原子层处理应用很有吸引力。特别是,在电子束产生的等离子体中,电子温度保持在0.3到1.0 eV之间时,可以产生高电子密度(10(10)-10(11)cm(-3))。因此,可以以1至5eV范围内的动能将大的离子通量传递到衬底表面。这为以单层精度可控地蚀刻和/或工程化表面形态和化学性质提供了潜力。这项工作描述了电子束驱动的等离子体处理系统,尤其要注意系统的特性以及控制离子向表面及其能量的产生和传递的能力。 (C)2015年作者。ECS发布。这是根据知识共享署名4.0许可(CC BY,http://creativecommons.org/licenses/by/4.0/)的条款分发的开放获取文章,允许在任何介质中无限制地重复使用该作品,正确引用了原始作品。版权所有。

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