1,269,275. Pressure-sensitive semi-conductor devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 4 July, 1969 [19 July, 1968], No. 33790/69. Heading HlK. Pressure is applied to a rectifying contact of a semi-conductor body doped with a deep level impurity through a flat semi-conductor plate of high resistivity and of closely comparable hardness to that of the semi-conductor body. The body may be of monocrystalline silicon doped with copper, gold, iron, cobalt, or nickel. The lapped and polished pressure-transmitting plate may be of mono- or poly-crystalline silicon having high resistivity as a result of low doping or of doping with silver or gold. Alternative semi-conductor bodies may be made of germanium, gallium arsenide, gallium phosphide, indium arsenide, or cadmium selenide (each doped with a deep level impurity). Though only one contact need be rectifying for D.C. operation, two rectifying contacts are necessary for A.C. use.
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