SEMICONDUCTOR PRESSURE-ELECTRIC TRANSDUCER INCLUDING A SEMICONDUCTOR ELEMENT HAVING A DEEP LEVEL IMPURITY AND A SEMICONDUCTOR PRESSURE TRANSMITTING PLATE

摘要

1,271,977. Pressure-sensitive semi-conductor device. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 4 July, 1969 [19 July, 1968], No. 33792/69. Heading H1K. Pressure is applied to a rectifying contact of a semi-conductor body (doped with a deeplevel impurity) through a flat semi-conductor plate opposite in conductivity type to the body surface. The body may be of silicon doped with copper, gold, iron, cobalt or nickel. Alternative materials for the body are germanium, gallium arsenide, gallium phosphide, indium arsenide, or cadmium selenide (each doped with a deeplevel impurity). The plate may be of silicon or of germanium, gallium phosphide, indium arsenide, or cadmium sulphide. Though only one contact need be rectifying for D.C. operation, two rectifying contacts are necessary for A.C. use.