SEMICONDUCTOR PRESSURE-ELECTRIC TRANSDUCER

摘要

1278095 Semi-conductor pressure transducers MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 4 July 1969 [19 July 1968 33791/69 Heading H1K Pressure is applied to a rectifying contact of a semi-conductor body doped with a deep-level impurity through a flat plate coated with insulation at least on its surface adjacent the element. The plate is of metallic silicon or of iron (and its alloys), of nickel (and its alloys), of tungsten, of molybdenum, or of tungsten-molybdenum alloys. In general the plate may be coated with an oxide or nitride by sputtering, may be glazed with a vitreous material, or may be coated with a plastic. In the embodiment, a metallic silicon plate coated by evaporation or thermal oxidation with silicon monoxide or with silica is used to apply pressure to a silicon body doped with copper, gold, iron, cobalt or nickel. Alternative semi-conductor bodies may be made of germanium, gallium arsenide, gallium phosphide, indium arsenide, or cadmium selenide. Though only one contact need be rectifying for D.C. operation, two rectifying contacts are necessary for A.C. use.