首页> 外国专利> Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element

Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element

机译:通过从沿着刀形加热元件的表面向下流动的熔体中抽出硅的晶种,从硅熔体中制造结晶硅的平坦带的方法

摘要

A method of manufacturing bodies from meltable crystalline material in which a continuous tape of said material is manufactured by causing melted material to flow along at least one surface of a heated element, which surface is wetted by the melted material, and causing the tape to grow by drawing away a second near the lower side of the surface. Application in particular to the manufacture of semiconductor bodies, for example of silicon.
机译:一种由可熔化的晶体材料制造物体的方法,其中通过使熔化的材料沿加热元件的至少一个表面流动,使该材料被熔化的材料润湿,并使熔化的带子生长来制造所述材料的连续带。通过拉近表面下侧的第二个位置。特别地应用于制造半导体本体,例如硅。

著录项

  • 公开/公告号US4125425A

    专利类型

  • 公开/公告日1978-11-14

    原文格式PDF

  • 申请/专利权人 U.S. PHILIPS CORPORATION;

    申请/专利号US19770772349

  • 发明设计人 JEAN-JACQUES L. E. BRISSOT;

    申请日1977-02-28

  • 分类号B01J17/18;B01J17/16;

  • 国家 US

  • 入库时间 2022-08-22 19:22:40

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