Method for detecting end of polycrystalline silicon melt, method for setting seed crystal deposition temperature, and apparatus for manufacturing silicon single crystal

摘要

It is found that the polycrystalline silicon source is completely melted and the melting temperature of the silicon melt is lowered after the melting is completed, and the melt temperature suitable for growing the single crystal is efficiently obtained, and the process loss is reduced, and the labor saving and the burden reduction of the work are attempted A method of detecting a polycrystalline silicon melt state and a silicon single crystal manufacturing apparatus are provided. The first dissolution in which the melting of the polycrystalline silicon material was terminated when the silicon melt surface temperature in the crucible was measured by an optical means and the width of the measured silicon melt surface temperature became less than a predetermined value The melting end point is detected and the completion of melting of the polycrystalline silicon raw material is detected by the first melting end point.