A method for programming of an electrically vera end is not - flue chtigen semiconductor memory, which is for cell groups erasable

• 1. 一种具有电子俘获擦除状态的非易失半导体存储单元及其操作方法 [P] . 中国专利： CN101582428B . 2012.05.23
• 2. 一种具有电子俘获擦除状态的非易失半导体存储单元及其操作方法 [P] . 中国专利： CN101582428A . 2009-11-18
• 3. A method for programming of an electrically vera end is not - flue chtigen semiconductor memory [P] . 德国专利： DE3036375A1 . 1981-04-16

  机译： 非电动半导体存储器编程的方法

• 4. Flash memory device and the nonvolatile semiconductor memory device and a program methods comprising the cells can be electrically erased and programmed cell plate structure [P] . 日本专利： JP3821579B2 . 2006-09-13

  机译： 闪存装置和非易失性半导体存储装置以及包括该单元的编程方法可以被电擦除并编程单元板结构

• 5. NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE MEMORY CELLS OF PLATE CELL STRUCTURE AND PROGRAM METHOD THEREOF [P] . 韩国专利： KR100252476B1 . 2000-04-15

  机译： 具有板状细胞结构的电可擦除和可编程存储单元的非易失性半导体存储器件及其程序方法

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• 5. Characterization of floating gate implantation dose and its effect on PMOS Electrical Erasable Cell (PEEC) memory arrays. [D] . Alvarez Vega, Daniel. 2009
• 6. Impact of program/erase operation on the performances of oxide-based resistive switching memory [O] . Guoming Wang, Shibing Long, Zhaoan Yu, 2015
• 7. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack [O] . Shi-Bing Qian, Wen-Peng Zhang, Wen-Jun Liu, 2015

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