Influence of a Semiconductor Gap’s Energy on the Electrical Parameters of a Parallel Vertical Junction Photocell

摘要

The present work is a theoretical study on a parallel vertical junction solar cell under a multi-spectral illumination in static regime. The density of the minority charge carriers was determined based on the diffusion equation. Photocurrent and photovoltage are deducted from such density. All these parameters are studied taking into account the influence of the gap energy (Eg).