Susceptors for organometallic vapor-phase epitaxial (OMVPE) method

摘要

Susceptor formed with a base and with a pedestal made of materials respectively having low and high radio-frequency (r-f) absorptivities. Mercury is carried in a cavity in the base and a semiconductor substrate is carried in a cavity in the pedestal. When an r- f field is applied to the susceptor, the substrate is heated to a higher temperature than the mercury.