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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

机译：氢化物与金属有机气相外延复合生长GaN薄膜的裂纹研究

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1. High-Quality 2″ Bulk-Like Free-Standing GaN Grown by Hydride Vapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density [J] . Daniela GoGOVA, Henrik LARSSON, Alexander KASIC, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第3期

机译：通过具有超低位错密度的Si掺杂金属有机气相外延GaN模板，通过氢化物气相外延生长的高质量2英寸大块自由态GaN
2. Morphological evaluation of epitaxial GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy [J] . K. Kusakabe, K. Ohkawa Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：金属有机气相外延在r面蓝宝石上生长的外延GaN的形态学评估
3. Combined hydride and metal organic vapor-phase epitaxy of GaN on sapphire [J] . G. S. Solomon, D. J. Miller, M. Ramsteiner, Applied Physics Letters . 2005,第18期

机译：蓝宝石上GaN的氢化物与金属有机气相的结合外延
4. GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor [C] . M. Hao, H. Ishikawa, B. Zhang, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：在蓝宝石衬底上生长的GaN薄膜和GaN的发光二极管，具有原位金属有机气相外延反应器的高密度纳米陨石液
5. Strontium titanium oxide and barium(1-x) strontium(x) titanium oxide epitaxial thin films grown by plasma-enhanced metalorganic chemical vapor deposition. [D] . Liang, Shaohua. 1995

机译：通过等离子体增强的金属有机化学气相沉积法制得的锶钛氧化物和钡（1-x）锶钛氧化物外延薄膜。
6. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method [O] . Jianming Liu, Xianlin Liu, Chengming Li, 2011

机译：氢化物与金属有机气相外延复合生长GaN薄膜的裂纹研究
7. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method [O] . Liu, Jianming, Liu, Xianlin, Li, Chengming, 2011

机译：氢化物与金属有机气相外延复合生长GaN薄膜的裂纹研究
8. Characterization of MOCVD (Metal Organic Chemical Vapor Deposition) Grown Epitaxial Ceramic Oxide Thin Films. [R] . Parker, J. C., Chang, H. L. M., Xu, J. J., 1989

机译：mOCVD（金属有机化学气相沉积）生长外延陶瓷氧化物薄膜的表征。

Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

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