SEMICONDUCTOR SUBSTRATE SUPPORT SUSCEPTOR FOR VAPOR-PHASE EPITAXY, EPITAXIAL WAFER MANUFACTURING DEVICE, AND EPITAXIAL WAFER MANUFACTURING METHOD

摘要

According to the present invention, there is provided a vapor-phase growth semiconductor substrate support susceptor for supporting a semiconductor substrate at the time of vapor-phase growth, wherein the susceptor comprises a pocket portion in which the semiconductor substrate is arranged and has a taper portion having a taper formed such that an upper surface of the susceptor is inclined upwards or downwards from an edge of the pocket portion to an outer side. As a result, there can be provided the susceptor for supporting the semiconductor substrate at the time of vapor-phase growth that can improve flatness of an epitaxial wafer by controlling a layer thickness of an epitaxial layer at a peripheral portion on a main front surface side of the epitaxial wafer, and the epitaxial wafer manufacturing apparatus using this susceptor.