SEMICONDUCTOR SUBSTRATE SUPPORT SUSCEPTOR FOR VAPOR-PHASE EPITAXY, EPITAXIAL WAFER MANUFACTURING DEVICE, AND EPITAXIAL WAFER MANUFACTURING METHOD

摘要

Disclosed is a susceptor that supports a semiconductor substrate during vapor-phase epitaxy. Said susceptor is provided with a counterbore in which the semiconductor substrate is placed. The top surface of the susceptor has a tapered section tapered up or down outwards from the edge of the counterbore. By thereby controlling the epitaxial layer thickness around the edge of a principal surface of an epitaxial wafer, the disclosed susceptor can make the epitaxial wafer flatter. Also disclosed is an epitaxial wafer manufacturing device using the disclosed susceptor.